This year CS MANTECH will introduce design concepts for GaN power devices, their materials growth, testing methods, to packaging and compact modelling to equip you with the expertise for the next generation of power device technology.
Much of the low-carbon technology presently still relies on Silicon (Si) based power electronic devices. While these devices are serving us well, the unequivocal need to accelerate the reduction of our carbon footprint and to reduce the ongoing climate changes demonstrates the clear urgency to do much more. Some of the Si technology is therefore starting to be replaced with wide bandgap semiconductors based on Gallium Nitride (GaN) and Silicon Carbide (SiC) to enable our daily lives, from charging our phones and laptops, to feeding in wind or solar energy into the national grid. There are huge opportunities for these wide bandgap (and upcoming ultrawide bandgap) materials and devices to make a major environmental (and economic) positive impact.